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电话：025-83794642
出生年月：1980-07-01
邮箱：WN@SEU.EDU.CN
学历：博士
地址：
职称：副研究员
个人简介 副研究员，硕导，博导。出生于1980.7。2009年毕业于南京大学物理系，微电子学与固体电子学专业，获博士学位。2010-2012年间赴法国Université Claude-Bernard Lyon 1从事博士后研究。2018年和2019-2020年间美国Tennessee University和ORNL访问学者。目前研究方向：高性能微电子材料和器件；电子系统和软件系统设计与应用。
教育经历 工作经历 讲授课程
《固体物理基础》，《电子器件（双语）》，《电子信息类专业学习概论（研讨）》，《纳微光机电基础》
《极紫外光刻原理（全英文）》，《半导体晶体生长（全英文）》 教学研究 承担校级教改项目一项；全英文精品课程建设校级项目一项；教育部产学协同育人项目一项；承担《电子工程物理基础》教材第四版修订。 出版物 研究领域或方向 研究项目 先后主持一项目教育部博士点基金项目、三项国家自然科学基金项目、一项产学合作协同育人项目；参与多项973项目子课题、科技部重点基础研究计划、国家自然科学基金项目和江苏省自然科学基金等国家和省部级项目。目前已发表40多篇SCI收录文章。获授权发明专利20多项。 研究成果 Some recent advances:
12.Zhiyuan Sheng; Ming Tian; Xinyu Chen; Zerui Wang; Xunbing Cai; Neng Wan; Shiwei Wu, Dielectric breakdown of atmospheric-pressure grown hexagonal boron nitride single crystals, Appl. Phys. Lett.126, 233102 (2025)
The hBN is working as a reliable 2D dielectric. 11. Ruowang Chen, Hui Shi, Yu Liu, Mingyuan Wang, Dundong Yuan, Junpeng Shu, Md Al Shahriar Akash, Ming Tian, Zhenning Hu, Jiamin Xue, Hong-Quan Zhao, Fengyu Li*, Neng Wan*, Au–In Alloy for Excellent Ohmic Contact in GeSe Devices with Enhanced Photodetector Properties, ACS Appl. Mater. Interfaces 2025, 17, 6, 10158–10167 We find a way to obtain record low Rc in GeSe devices. 10.Zhao Guan, Lu-qi Wei, Wen-cheng Fan, Yi-chen Sun, Wei Cao, Ming Tian, Neng Wan, Wen-yi Tong, Bin-bin Chen, Ping-hua Xiang, Chun-gang Duan, Ni Zhong, Mechanical force-induced interlayer sliding in interfacial ferroelectrics, Nature Communications volume 16, Article number: 986 (2025) We observed novel dynamics in BN ferroelectrics. Article link: Mechanical force-induced interlayer sliding in interfacial ferroelectrics | Nature Communications 9.Wen-Cheng Fan, Zhao Guan, Lu-Qi Wei, Hao-Wen Xu, Wen-Yi Tong, Ming Tian, Neng Wan, Cheng-Shi Yao, Jun-Ding Zheng, Bin-Bin Chen, Ping-Hua Xiang, Ni Zhong, Chun-Gang Duan, Edge polarization topology integrated with sliding ferroelectricity in Moiré system, Nature Communications volume 16, Article number: 3557 (2025) BN moire system show interesting topology. Article link: Edge polarization topology integrated with sliding ferroelectricity in Moiré system | Nature Communications 8.Cheng Hu, Jiajun Chen, Xianliang Zhou, Yufeng Xie, Xinyue Huang, Zhenghan Wu, Saiqun Ma, Zhichun Zhang, Kunqi Xu, Neng Wan, Yueheng Zhang, Qi Liang & Zhiwen Shi, Collapse of carbon nanotubes due to local high-pressure from van der Waals encapsulation, Nature Communications volume 15, Article number: 3486 (2024) CNT is under high pressure applied by hBN. Article link: Collapse of carbon nanotubes due to local high-pressure from van der Waals encapsulation | Nature Communications
7. Ming Tian, Ning-Ning Wang, Gang Wang, Md Al Shahriar Akash, Hui Shi, Junpeng Shu, Ruowang Chen, Nadia Afzal, Zhenning Hu, Shun-Shun Yang, Linglong Zhang, Yu Zhang, Juanjuan Xing, Kenji Watanabe, Takashi Taniguchi, Neng Wan*, Jinguang Cheng*, High-Pressure High-Temperature Synthesis of Hexagonal Boron Nitride Single Crystals from a Sr3B2N4 Solvent,Cryst. Growth Des. 2024, 24, 20, 8557–8562 We find a new system for HPHT hBN single crystal growth. 6.Ming Tian, Cui Ding, Hui Shi, Jun-peng Shu, Ruo-wang Chen, Md Al Shahriar Akash, Zhen-ning Hu, Nadia Afzal, Tao Lin and Neng Wan*, Low-cost growth of high-quality monoisotopic hexagonal boron nitride single crystals using a boric acid precursor,J. Mater. Chem. C, 2024,12, 13854-13862 Monoisotopic BN might grown by low cost precursors. 5. MingLv, Jiulong Wang, Ming Tian, Neng Wan*, Wenyi Tong*, Chungang Duan & Jiamin Xue*, Multiresistance states in ferro- and antiferroelectric trilayer boron nitride, Nature Communications, volume 15, Article number: 295 (2024) We find multiresistance states in tri-layer boron nitride. Article link: Multiresistance states in ferro- and antiferroelectric trilayer boron nitride | Nature Communications 4.Zhou, J. C.; Li, H. X.; Tian, M.; Chen, A. Z.; Chen, L.; Pu, D.; Hu, J. Y.; Cao, J. H.; Li, L. F.; Xu, X. Y.; Tian, F.; Malik, M.; Xu, Y.; Wan, N.*; Zhao, Y. D.*; Yu, B.*, Multi-Stimuli-Responsive Synapse Based on Vertical van der Waals Heterostructures. ACS App. Mater. Inter. 2022, 14, 35917-35926. We demonstrated a multi-stimuli-responsive synapse mechanism based on hBN. Article link: Multi-Stimuli-Responsive Synapse Based on Vertical van der Waals Heterostructures | ACS Applied Materials & Interfaces 3.Wang, M. Y.; Shi, H.; Tian, M.; Chen, R. W.; Shu, J. P.; Zhang, Q.; Wang, Y. H.; Li, C. Y.; Wan, N.*; Lei, S. Y.*, Single Nickel Atom-Modified Phosphorene Nanosheets for Electrocatalytic CO2 Reduction. ACS Appl. Nano Mater. 2021, 4, 10, 11017-11030. We demonstrated theoretically to use metal doped black phosphorene for CO2 capture. Article link: Single Nickel Atom-Modified Phosphorene Nanosheets for Electrocatalytic CO2 Reduction | ACS Applied Nano Materials 2. Xiaokang Zhao, Ruowang Chen, Kang Xu, Siyuan Zhang, Hui Shi, Zhiyong Shao, Neng Wan*. Nanoscale water film at a super-wetting interface supports 2D material transfer, 2D Materials 2020, 8(1): 015021. We observe a nanometer thickness water film between MoS2 and substrate. Article link:https://iopscience.iop.org/article/10.1088/2053-1583/abc2a7 1. Siyuan Zhang, Xu Kang, Xiaokang Zhao, Zhiyong Shao, Neng Wan*. Improved hBN single-crystal growth by adding carbon in the metal flux, Cryst. Growth Des. 2019, 19(11): 6252. We realized large area hBN bulk-type single crystal growth using APHT proess. Article link: Improved hBN Single-Crystal Growth by Adding Carbon in the Metal Flux | Crystal Growth & Design
学术兼职 团队介绍 已毕业同学： 陈若望 邵志勇 赵小康，徐康 张思源 于冬雪，李慕凡，贾秀川，聂川川，李正正 潘康，杨志民 纪盛林，陈鹏，凡友璇 在读博士研究生： 田明 束俊鹏 施辉 Nadia Afzal 朱玉泉 在读硕士研究生： MD AL SHAHRIAR AKASH 胡振宁，叶航，崔宇翔，刘昕睿，谭枞，杨子剑 史小飞，解子强，王丽莹 黄宏铭，占建涛，余晓键，黄华琛 课题组活动 https://seugs.seu.edu.cn/2021/0611/c28925a374704/page.htm 祝贺！ 1.张思源同学获得研究生国家奖学金： https://electronic.seu.edu.cn/2020/1013/c11892a349607/page.htm 祝贺！ 招生情况 课题组欢迎具有以下方面背景或者对以下方向感兴趣的博士或者硕士同学：
请邮件联系：wn@seu.edu.cn 毕业生介绍 |
