张龙职务:
单位:国家ASIC工程中心
电话:
出生年月:
邮箱:longzh@seu.edu.cn
学历:工学博士
地址:
职称:青年首席教授
个人简介 bevictor伟德官网青年首席教授,国家高层次青年人才,博导。
教育经历 ⭕2013年于bevictor伟德官网集成电路工程专业获硕士学位(导师:孙伟锋); ⭕2018年于bevictor伟德官网微电子学与固体电子学获博士学位(导师:孙伟锋;丁德胜)。 工作经历 ⭕2013-2014年就职于美国芯源系统有限公司(MPS); ⭕2018-2019年于香港科技大学从事访问学者科研工作(Kevin J. Chen教授团队); ⭕2018-2020年于bevictor伟德官网从事博士后科研工作(合作导师:赵剑锋教授); ⭕2020年-2024年,bevictor伟德官网副教授; ⭕2025年至今,bevictor伟德官网青年首席教授。 讲授课程 ⭕《功率集成电路设计基础》,本科课程,48学时; ⭕《模拟集成电路版图》,硕士课程,32学时; ⭕《电子器件(双语)》,本科课程,48学时; ⭕《集成电路制造/封装/微纳器件综合课程设计》,本科课程,144学时。 教学研究 出版物 ⭕专著 [1]《高压厚膜 SOI-LIGBT 器件关键技术》,人民邮电出版社,张龙,孙伟锋,刘斯扬; [2]《宽禁带功率半导体器件可靠性》,bevictor伟德官网出版社,孙伟锋,张龙等; ⭕论文代表作 [1] Long Zhang, Jie Ma, Yong Gu, Siyang Liu, Jiaxing Wei, Sheng Li, Weifeng Sun, Sen Zhang, “41% Reduction in Power Stage Area on Silicon-on- Insulator Bipolar-CMOS-DMOS-IGBT Platform with Newly Developed Multiple Deep-oxide Trench Technology”, International Electron Devices Meeting (IEDM), 2022, pp.9.4.1-9.4.4. [2] Jie Ma, Yong Gu, Mengyao Zhao, Tianchun Nie, Jiaxing Wei, Sheng Li, Runhua Huang, Song Bai, Siyang Liu*, Weifeng Sun*, Long Zhang*(通讯), Improving Irradiation Reliability of 4H-SiC 1200V LDMOS and 20V CMOS Logic Circuits with Leakage Current Blocking Technology, 2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, 2025, pp. 1-3. [3] Long Zhang, Yong Gu, Jie Ma, Xiangyu Hou, Hongyang Wen, Jingjing Hong, Siyang Liu, Ao Liu, Runhua Huang, Song Bai, and Weifeng Sun, Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation, IEEE Electron Device Letters, vol. 45, no. 4, pp. 542-545, 2024. [4] Long Zhang, Guiqiang Zheng, Yichen Li, Xueqi Li, Xiaofeng Sun, Jie Ma, Min Zou, Dejin Wang, Sen Zhang, Yongjia Li, Siyang Liu, Weifeng Sun, An Economical Three-Dimension (3-D) Hall Device on 0.15-μm Bipolar-CMOS-DMOS (BCD) Platform, IEEE Sensors Journal, vol. 24, no. 7, pp. 9828-9834, 2024. [5] Long Zhang, Jie Ma, Yongjiu Cui, Wangming Cui, Shuai Yuan, Jing Zhu, Nailong He, Sen Zhang, and Weifeng Sun, “Simulation Study of A 1200V 4H-SiC Lateral MOSFET With Reduced Saturation Current,” IEEE Electron Device Letters, vol. 42, no. 7, pp. 1037-1040, 2021. [6] Yong Gu, Tianchun Nie, Shuqiang Chen, Yawen Xu, Haining Shi, Runhua Huang, Song Bai, Jie Ma, Sheng Li, Jiaxing Wei, Long Zhang*(通讯), Siyang Liu*, and Weifeng Sun*, “Mobility-Boosting Technique With Floating N-Islands for 4H-SiC LDMOS,” IEEE Electron Device Letters, vol. 47, no. 2, pp. 261-264, 2026. [7] Jie Ma, Mengyao Zhao, Tianchun Nie, Yong Gu, Zhenya Wang, Runhua Huang, Song Bai, Jiaxing Wei, Sheng Li, Siyang Liu*, Long Zhang*(通讯), and Weifeng Sun*, “1100-V, 600-A/cm2 4H-SiC Lateral IGBT on N-Sub/N-Epi Stack With P-Top Protected Lightly Doped Drift Region,” IEEE Electron Device Letters, vol. 47, no. 2, pp. 233-236, 2026. [8] Guiqiang Zheng, Jie Ma, Yichen Li, Nannan Cheng, Qingyin Zhong, Lanlan Yang, Nailong He, Dejin Wang, Sen Zhang, Yongjia Li, Long Zhang*(通讯), Siyang Liu, and Weifeng Sun, “SOI Lateral Hall Device With Deep Trench Fingers for High Sensitivity and Low Offset,” IEEE Electron Device Letters, vol. 45, no. 11, pp. 2166-2169, 2024. [9] Long Zhang, Jing Zhu, Shilin Cao, Jie Ma, Ankang Li, Jin Wei, Gang Lyu, Shaohong Li, Sheng Li, Jiaxing Wei, Wangran Wu, Weifeng Sun, and Kevin J. Chen, “Mechanism and Novel Structure for di/dt Controllability in U-Shaped Channel Silicon-on-Insulator Lateral IGBTs,” IEEE Electron Device Letters, vol. 40, no. 10, pp. 1658-1661, 2019. [10] Chengwu Pan, Mingxin Sun, Nailong He, Jiayu Li, Mengyan Wu, Dejin Wang, Sen Zhang, Yunwu Zhang, Jie Ma, Siyang Liu, Long Zhang*(通讯), Weifeng Sun, A Bootstrap Diode Fabricated by a New 1200-V Silicon-on-Insulator Bipolar-CMOS-DMOS Process for High Voltage Integrated Circuits, IEEE Electron Device Letters, vol. 47, no. 3, pp. 442-445,2026. 研究领域或方向 功率半导体器件与集成电路方向: ⭕硅基集成型器件及BCD技术; ⭕碳化硅(SiC)集成型器件、BCD技术、集成电路设计; ⭕基于人工智能(AI)的功率半导体器件设计; ⭕基于人工智能(AI)功率半导体器件建模及可靠性寿命预测。 研究项目 研究成果 学术兼职 ⭕中国研究生工程案例首席专家; ⭕国际会议 IEEE EDSSC 技术委员共同主席; ⭕IEEE ICSICT功率器件与集成电路分会主席; ⭕bevictor伟德官网学报(英文版)青年编委; ⭕江苏省工程师学会理事; ⭕江苏集成电路学会模拟集成电路专委会委员。 ⭕江苏省教学成果一等奖,2025年 ⭕bevictor伟德官网教学成果特等奖,2025年 ⭕中国发明创业奖人物奖,2025; ⭕江苏省科技进步二等奖,2025; ⭕教育部工程技术一等奖,2025; ⭕日内瓦国际专利展金奖,2025; ⭕中国专利优秀奖,2022; ⭕中国电子学会优秀博士学位论文,2019; ⭕江苏省优秀创新创业博士后,2021。 团队介绍 招生情况 ⭕ 课题组现有博士研究生12人,硕士研究生19人,博士后1人,青年教师1人。 毕业生介绍 |